HSU227 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for High Speed Switching

HSU227
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-779(Z)
Rev 0
Mar. 1999
Features
• Low capacitance. (C=3.0pF max)
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSU227
Laser Mark
S3
Package Code
URP
Outline
Cathode mark
Mark
1 _S3 2
1. Cathode
2. Anode