HSM276SR Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

HSM276SR
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-040D (Z)
Rev. 4
Aug. 1994
Features
• High forward current, Low capacitance.
• HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM276SR
Laser Mark
C9
Package Code
MPAK
Pin Arrangement
3
2
1
(Top View) _{1 Anode 1}
2 Cathode 2
3 Cathode 1
Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average forward current
Junction temperature
Storage temperature
Note: Per one device
Symbol
V_R
I_O*
Tj
Tstg
Value
Unit
3
V
30
mA
125
°C
–55 to +125
°C