HSM113WK Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Battery Switch

ADE-208-025A(Z)
HSM113WK
Silicon Schottky Barrier Diode
for Battery Switch
Preliminary
Rev.1
Apr. 1993
Features
Pin Arrangement
• The HSM113WK has two different (V_F- I_F)
chips, and can change the main battery to the
backup battery automatically.
• MPAK package is suitable for high density
surface mounting and high speed assembly.
Ordering Information
Type No.
HSM113WK
Laser Mark
S12
Package Code
MPAK
3
2
1
(Top View) _{1 Anode}
2 Anode
3 Cathode
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Peak reverse voltage
Forward current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
* 10msec, 1 pulse square wave
V_RM
I_F
I_FSM *
T_j
Tstg
Value
Value
Unit
Pin 1-3
Pin 2-3
20
20
V
200
100
mA
2
0.6
A
125
125
°C
-55 to +125 -55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Forward voltage
V_F1
Forward voltage
V_F2
Reverse current
I_R
Pin 1-3
Pin 2-3
Pin 1-3
Pin 2-3
Pin 1-3
Pin 2-3
Min Typ Max
—
—
0.35
1.2 —
1.8
—
—
0.55
—
—
3.0
—
—
10
—
—
1.0
Unit
Test Condition
V
I_F = 10mA
V
I_F = 200mA
I_F = 100mA
µA
V_R = 5 V
V_R = 20V