HRW26 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for High Frequency Rectifying

ADE-208-155B(Z)
HRW26
Silicon Schottky Barrier Diode
for High Frequency Rectifying
Features
• Low forward voltage drop. (V_F =0.55V max)
• High reverse voltage. (V_R =40V max)
Pin Arrangement
Rev. 2
Nov. 1994
Ordering Information
Type No.
HRW26
Laser Mark
HRW26
Package Code
TO-220AB
123
Absolute Maximum Ratings (Ta = 25°C) *
Item
Symbol
Repetitive peak reverse voltage
Average forward current
Non-Repetitive peak forward surge current
Junction temperature
V_RRM
I _o**
I_FSM***
T_j
Storage temperature
T_stg
* Per one device
** Square wave, Duty (1/2), Tc=95°C, Sum of two devices
*** Half sine wave 10msec
Value
40
10
70
125
-40 to +125
1 23
1 Anode
2 Cathode
3 Anode
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C) *
Item
Symbol Min Typ
Forward voltage
V_F
—
—
Reverse current
I_R
—
—
* Per one device
Max
Unit Test Condition
0.55
V
I _F = 4.0 A
1.0
mA V_R = 40 V