HM62W4100H Datasheet, PDF (1/13 Pages) Hitachi Semiconductor – 4M High Speed SRAM (1-Mword x 4-bit)

HM62W4100H Series
4M High Speed SRAM (1-Mword × 4-bit)
ADE-203-774D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed
circuit designing technology. It is most appropriate for the application which requires high speed and high
density memory, such as cache and buffer memory in system. The HM62W4100H is packaged in 400-mil
32-pin SOJ for high density surface mounting.
Features
• Single supply : 3.3 V ± 0.3 V
• Access time 12/15 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current : 180/160 mA (max)
• TTL standby current : 60/50 mA (max)
• CMOS standby current : 5 mA (max)
: 1 mA (max) (L-version)
• Data retension current : 0.6 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center V_CC and V_SS type pinout