HM62W16255H Datasheet, PDF (1/17 Pages) Hitachi Semiconductor – 4M High Speed SRAM (256-kword x 16-bit)

HM62W16255H Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-751D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. The
HM62W16255H is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density
surface mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 12/15 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current: 180/160 mA (max)
• TTL standby current: 60/50 mA (max)
• CMOS standby current: 5 mA (max)
: 1mA (max) (L-version)
• Data retension current: 0.6 mA (max) (L-version)
• Data retension voltage: 2.0 V (min) (L-version)
• Center V_CC and V_SS type pinout