HM62V8512C Datasheet, PDF (1/16 Pages) Hitachi Semiconductor – 4 M SRAM (512-kword x 8-bit)

HM62V8512C Series
4 M SRAM (512-kword × 8-bit)
ADE-203-1210A (Z)
Rev. 1.0
Jan. 31, 2001
Description
The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing CMOS process technology (6-transistor
memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is
available for high density mounting. The HM62V8512C is suitable for battery backup system.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation
 Active: 6.0 mW/MHz (typ)
 Standby: 2.4 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs
• Battery backup operation