HM62V8512B Datasheet, PDF (1/17 Pages) Hitachi Semiconductor – 4 M SRAM (512-kword x 8-bit)

HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z)
Rev. 6.0
Mar. 31, 2000
Description
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high
density mounting. The HM62V8512B is suitable for battery backup system.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 70/85 ns (max)
• Power dissipation
 Active: 15 mW/MHz (typ)
 Standby: 3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs
• Battery backup operation