HM62G18512 Datasheet, PDF (1/23 Pages) Hitachi Semiconductor – 8M Synchronous Fast Static RAM(512k-word x 18-bit)

HM62G18512 Series
8M Synchronous Fast Static RAM
(512k-word × 18-bit)
ADE-203-1185 (Z)
Preliminary
Rev. 0.0
Jun. 12, 2000
Description
The HM62G18512 is a synchronous fast static RAM organized as 512-kword × 18-bit. It has realized high
speed access time by employing the most advanced CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119-
bump BGA.
Note: All power supply and ground pins must be connected for proper operation of the device.
Features
• Power supply: 3.3 V +10%, –5%
• Clock frequency: 200 MHz to 250 MHz
• Internal self-timed late write
• Byte write control (2 byte write selects, one for each 9-bit)
• Optional ×36 configuration
• HSTL compatible I/O
• Programmable impedance output drivers
• User selective input trip-point
• Differential, HSTL clock inputs
• Asynchronous G output control
• Asynchronous sleep mode
• Limited set of boundary scan JTAG IEEE 1149.1 compatible
• Protocol: Single clock register-register mode
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specifications.