HM51W16165 Datasheet, PDF (1/36 Pages) Hitachi Semiconductor – 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh

HM51W16165 Series
HM51W18165 Series
16 M EDO DRAM (1-Mword × 16-bit)
4 k Refresh/1 k Refresh
ADE-203-650D (Z)
Rev. 4.0
Nov. 1997
Description
The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as
1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and
low power. HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a
high speed access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil
50-pin plastic TSOP.
Features
• Single 3.3 V (±0.3 V)
• Access time: 50 ns/60 ns/70 ns (max)
• Power dissipation
 Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)
 Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
• EDO page mode capability
• Refresh cycles
 4096 refresh cycles : 64 ms (HM51W16165 Series)
: 128 ms (L-version)
 1024 refresh cycles : 16 ms (HM51W18165 Series)
: 128 ms (L-version)
• 4 variations of refresh
 RAS-only refresh
 CAS-before-RAS refresh
 Hidden refresh
 Self refresh (L-version)
• 2CAS-byte control
• Battery backup operation (L-version)
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