HM514400B Datasheet, PDF (1/27 Pages) Hitachi Semiconductor – 1,048,576-word X 4-bit Dynamic Random Access Memory

ADE-203-269A (Z)
HM514400B/BL Series
HM514400C/CL Series
1,048,576-word × 4-bit Dynamic Random Access Memory
Rev. 1.0
Nov. 29, 1994
The Hitachi HM514400B/BL, HM514400C/CL
are CMOS dynamic RAM organized 1,048,576-
word × 4-bit. HM514400B/BL, HM514400C/CL
have realized higher density, higher performance
and various functions by employing 0.8 µm CMOS
process technology and some new CMOS circuit
design technologies. The HM514400B/BL,
HM514400C/CL offer Fast Page Mode as a high
speed access mode. Multiplexed address input
permits the HM514400B/BL, HM514400C/CL to
be packaged in standard 300-mil 26-pin plastic
SOJ, standard 400-mil 20-pin plastic ZIP and 26-
pin plastic TSOP II.
Features
• Single 5 V (±10%)
• High speed
— Access time
60 ns/70 ns/80 ns (max)
• Low power dissipation
— Active mode
605 mW/550 mW/495 mW (max)
— Standby mode 11 mW (max)
0.55 mW (max) (L-version)
• Fast page mode capability
• 1024 refresh cycles : 16 ms
1024 refresh cycles : 128 ms (L-version)
• 3 variations of refresh
— RAS-only refresh
— CAS-before-RAS refresh
— Hidden refresh
• Test function
• Battery back up operation
— HM514400BL Series (L-version)
— HM514400CL Series (L-version)