HM514170C Datasheet, PDF (1/26 Pages) Hitachi Semiconductor – 262,144-word x 16-bit Dynamic Random Access Memory

HM514170C Series
HM51S4170C Series
262,144-word × 16-bit Dynamic Random Access Memory
Rev. 1.0
Jul. 21, 1995
Description
The Hitachi HM51(S)4170C are CMOS dynamic RAM organized as 262,144-word × 16-bit.
HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8
µm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4170C
offer fast page mode as a high speed access mode. Multiplexed address input permits the
HM51(S)4170C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin
plastic TSOPII. Internal refresh timer enables HM51S4170C self refresh operation.
Features
• Single 5 V (±10%)
• High speed
— Access time: 70 ns/80 ns (max)
• Low power dissipation
— Active mode: 660 mW/578 mW (max)
— Standby mode: 11 mW (max)
1.1 mW (max) (L-version)
• Fast page mode capability
• 1024 refresh cycles: 16 ms
128 ms (L-version)
• 2 WE-byte control
• 2 variations of refresh
— RAS-only refresh
— CAS-before-RAS refresh
• Battery backup operation (L-version)
• Self refresh operation (HM51S4170C)