HM5117400B Datasheet, PDF (1/25 Pages) Hitachi Semiconductor – 4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY

HM5117400B Series
4,194,304-word 4-bit Dynamic Random Access Memory
ADE-203-369A (Z)
Rev. 1.0
Nov. 15, 1995
Description
The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most
advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode
as a high speed access mode.
Features
Single 5 V ( 10%)
High speed
Access time : 60 ns/ 70 ns/ 80 ns (max)
Low power dissipation
Active mode : 605 mW/550 mW/495 mW(max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
Fast page mode capability
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
3 variations of refresh
-only refresh
-before- refresh
Hidden refresh
Battery backup operation (L-version)
Test function
16-bit parallel test mode
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.