HL8325G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – GaAlAs Laser Diode

HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well)
structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It
is suitable as a light source for optical disk memories, card readers and various other types of optical
equipment.
Features
• Infrared light output: λp = 820 to 840 nm
• High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode
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