HL7852G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – GaA1As Laser Diode

HL7852G
GaAlAs Laser Diode
Description
The HL7852G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source for optical disk memories, levelers and various other types of
optical equipment. Hermetic sealing of the package assures high reliability.
Features
• Visible light output: λp = 785 nm Typ
• Small beam ellipticity: 9.5:23
• High output power: 50 mW (CW)
• Built-in monitor photodiode
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