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HL7851G Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – GaAlAs Laser Diode | |||
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HL7851G
GaAlAs Laser Diode
Description
The HL7851G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source for optical disk memories, levelers and various other types of
optical equipment. Hermetic sealing of the package assures high reliability.
Features
⢠Visible light output: λp = 785 nm Typ
⢠Small beam ellipticity: 9.5:23
⢠High output power: 50 mW (CW)
⢠Built-in monitor photodiode
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