HL6312G Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – AlGaInP Laser Diodes

HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW)
structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code
readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package
achieves high reliability.
Features
• Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser)
• Optical output power: 5 mW CW
• Low Operating voltage: 2.7 V Max
• Single longitudinal mode
• Built-in photodiode for monitoring laser output
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