HE8812SG Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – GaAlAs Infrared Emitting Diode

HE8812SG
GaAlAs Infrared Emitting Diode
ODE-208-1000A (Z)
Rev.1
Jan. 2003
Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is
suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
• High efficiency and high output power
Package Type
• HE8812: SG1
Internal Circuit
1
2