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| HE8807SG Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – GaAlAs Infrared Emitting Diodes | |||
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HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength
of 880 nm.
Features
⢠High output, high efficiency
⢠Narrow spectral width
⢠Sharp radiation directivity (HE8807FL)
⢠Wide radiation directivity (HE8807SG)
⢠High reliability
Absolute Maximum Ratings (TC = 25°C)
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
IF
VR
Topr
Tstg
Rated Value
200
3
â20 to +85
â40 to +100
Units
mA
V
°C
°C
245
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