HAT2054M Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

HAT2054M
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
• 4.5V gate drive device can be driven from 5V source
Outline
ADE-208-756B(Z)
Preliminary
3rd. Edition
December 1998
TSOP–6
12 5 6
DD D D
3
G
S
4
4
5
6
3
2
1
4
Source
3
Gate
1, 2, 5, 6 Drain