BB101M Datasheet, PDF (1/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB101M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-504
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain