6AM15 Datasheet, PDF (1/14 Pages) Hitachi Semiconductor – Silicon N/P Channel MOS FET High Speed Power Switching

6AM15
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
N Channel : RDS(on) = 0.045 Ω typ.
P Channel : RDS(on) = 0.085 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High density mounting
Outline
ADE-208-719 (Z)
1st. Edition
February 1999