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| 6AM13 Datasheet, PDF (1/12 Pages) Hitachi Semiconductor – Silicon N-Channel/P-Channel Complementary Power MOS FET Array | |||
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6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET
Array
Application
High speed power switching
Features
⢠Low on-resistance
N-channel: RDS(on) ⤠0.075 , VGS = 10 V, ID = 5 A
P-channel: RDS(on) ⤠0.12 , VGS = â10 V, ID = â5 A
⢠Capable of 4 V gate drive
⢠Low drive current
⢠High speed switching
⢠High density mounting
⢠Suitable for H-bridged motor driver
ADE-208-1217 (Z)
1st. Edition
Mar. 2001
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