4AM15 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel/P-Channel Power MOS FET Array

4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A
P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline