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4AM11 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N-Channel/P-Channel Power MOS FET Array | |||
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4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
⢠Low on-resistance
N-channel: RDS(on) ⤠0.17 â¦, VGS = 10 V, ID = 2.5 A
P-channel: RDS(on) ⤠0.2 â¦, VGS = â10 V, ID = â2.5 A
⢠Capable of 4 V gate drive
⢠Low drive current
⢠High speed switching
⢠High density mounting
⢠Suitable for H-bridged motor driver
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