4AK27 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

4AK27
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) ≤ 0.15Ω, V_GS = 10V, I_D = 3.0A
• 4V gate drive devices.
• High density mounting
Outline
SP-10
ADE-208-728 (Z)
1st. Edition
January 1999
3
5
7
9
D
D
D
D
4
6
8
1 _{2 3 4 5 6 7 8 9 10}
2G
G
G
G
1, 10.
Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain