4AK26 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) ≤ 0.06 , V_GS = 10 V, I_D = 5 A
R_DS(on) ≤ 0.075 , V_GS = 4 V, I_D = 5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
1
G
2
D5
G
4
D8
G
9
11
D ₁₂
D
G
1 _{2 3 4 5 6 7 8 9101112}
S3
S6
S7
S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source