4AK25 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) 0.45 , V_GS = 10 V, I_D = 1 A
• Low drive current
• High speed switching
• High density mounting
Outline
SP-10
3
5
7
9
D
D
D
D
4
6
8
G
G
G
2G
1 _{2 3 4 5 6 7 8 9 10}
1, 10. Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain