4AK23 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) 0.25 , V_GS = 10 V, I_D = 2.5 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
SP-12TA
1
G
2
D5
G
4
D8
G
9
D ₁₂
G
11
D
1 _{2 3 4 5 6 7 8 9101112}
S3
S6
S7
S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source