4AK22 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) 0.4 , V_GS = 10 V, I_D = 1.5 A
R_DS(on) 0.55 , V_GS = 4 V, I_D = 1.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S)