English
Language : 

4AK20 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array
4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.25 , VGS = 10 V, ID = 2.5 A
RDS(on) 0.35 , VGS = 4 V, I D = 2.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1300, 2SK1305