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4AK19 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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4AK19
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
N Channel: RDS(on) ⤠0.5 â¦, VGS = 10 V, ID = 2.5 A
RDS(on) ⤠0.6 â¦, VGS = 4 V, ID = 2.5 A
⢠4 V gate drive devices.
⢠High density mounting
Outline
SP-10
ADE-208-727 (Z)
1st. Edition
February 1999
3
5
7
9
D
D
D
D
4
6
8
1 2 3 4 5 6 7 8 9 10
2G
G
G
G
1, 10. Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
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