4AJ11 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon P-Channel Power MOS FET Array

4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) 0.13 , V_GS = –10 V, I_D = –4 A
R_DS(on) 0.17 , V_GS = –4 V, I _D = –4 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver