2SK3390 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET UHF Power Amplifier

2SK3390
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz)
• Compact package capable of surface mounting
Outline
RP8P
D
3
1
G
2
S
Note: Marking is “IX”.
1
3
2
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
ADE-208-846 (Z)
1st. Edition
Aug.2001
1. Gate
2. Source
3. Drain