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| 2SK3380 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Switching | |||
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2SK3380
Silicon N Channel MOS FET
High Speed Switching
Features
⢠Low on-resistance
RDS =1.26 ⦠typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 ⦠typ. (VGS = 4 V , ID = 50 mA)
⢠4 V gate drive device.
Outline
SPAK
ADE-208-806 (Z)
1st.Edition.
June 1999
D
G
S
123
1. Source
2. Drain
3. Gate
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