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| 2SK3348 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Switching | |||
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2SK3348
Silicon N Channel MOS FET
High Speed Switching
Features
⢠Low on-resistance
RDS = 1.6 ⦠typ. (VGS = 4 V , ID = 50 mA)
RDS = 2.2 ⦠typ. (VGS = 2.5 V , ID = 50 mA)
⢠2.5 V gate drive device.
⢠Small package (CMPAK)
Outline
CMPAK
3
D
G
S
ADE-208-772 A (Z)
2nd.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
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