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| 2SK3290 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Switching | |||
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2SK3290
Silicon N Channel MOS FET
High Speed Switching
Features
⢠Low on-resistance
RDS = 0.455 ⦠typ. (VGS = 10 V , ID = 250 mA)
RDS = 0.9 ⦠typ. (VGS = 4 V , ID = 100 mA)
⢠4 V gate drive device.
⢠Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-744 C (Z)
4th.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
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