 English |
|
|
|
|
|
|
|
| 2SK3288 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Switching | |||
| |||
|
2SK3288
Silicon N Channel MOS FET
High Speed Switching
Features
⢠Low on-resistance
RDS = 2.7 ⦠typ. (VGS = 10 V , ID = 50 mA)
RDS = 4.7 ⦠typ. (VGS = 4 V , ID = 20 mA)
⢠4 V gate drive device.
⢠Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-803 (Z)
1st.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese