2SK3233 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3233
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1369 (Z)
1st. Edition
Mar. 2001
Features
• Low on-resistance: R_DS(on) = 1.1 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
• Avalanche ratings
Outline
TO–220CFM
D
G
123
1. Gate
2. Drain
3. Source
S