2SK3229 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3229
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) =6mΩ typ.
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
ADE-208-766(Z)
Target specification
1st. Edition
December 1998
D
G
S
123
1. Gate
2. Drain
3. Source