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| 2SK3211 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS = 60 m⦠typ.
⢠High speed switching
⢠4 V gate drive device can be driven from 5 V source
ADE-208-761A (Z)
2nd. Edition
February 1999
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