2SK3210 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =35mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
LDPAK
4
ADE-208-760(Z)
Target Specification, 1st. Edition
Dec. 1, 1998
4
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S