2SK3209 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3209
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =35mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220FM
ADE-208-759(Z)
Target Specification
1st. Edition
December 1998
D
G
S
123
1. Gate
2. Drain
3. Source