2SK3175A Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET UHF Power Amplifier

2SK3175A
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz)
• Compact package
Outline
RFPAK-G
3
2
D
ADE-208-1452 (Z)
1st. Edition
September 2001
G
S
1
1. Drain
2. Source
3. Gate
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
In AC testing , the part should be mounted on heat sink with thermal compound.