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2SK3163 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK3163
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 6 m⦠typ.
⢠Low drive current
⢠4 V gate drive device can be driven from 5 V source
Outline
TOâ3P
ADE-208-736A (Z)
2nd Edition
February 1999
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
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