2SK3162 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3162
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 60 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-735B (Z)
3rd. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source