2SK3161 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 90 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
ADE-208-734A (Z)
2nd. Edition
February 1999
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S