2SK3159 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 23 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
ADE-208-774 (Z)
Target Specification
1st. Edition
February 1999
D
G
1. Gate
1
2
3
2. Drain
(Flange)
3. Source
S