2SK3157 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3157
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 50 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-769A (Z)
2nd. Edition
Februaty 1999
D
G
S
123
1. Gate
2. Drain
3. Source