|
2SK3155 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
|
2SK3155
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS = 100 m⦠typ.
⢠High speed switching
⢠4 V gate drive device can be driven from 5 V source
Outline
TOâ220FM
ADE-208-768C (Z)
4th. Edition
Februaty 1999
D
G
S
123
1. Gate
2. Drain
3. Source
|
▷ |